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PDF 8ETH06 Data sheet ( Hoja de datos )

Número de pieza 8ETH06
Descripción Hyperfast Rectifier
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! 8ETH06 Hoja de datos, Descripción, Manual

Bulletin PD-20746 rev. F 02/04
8ETH06
8ETH06S
8ETH06-1
8ETH06FP
Hyperfast Rectifier
Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
• 2500V insulation voltage e
• UL E78996 approved
trr = 18ns typ.
IF(AV) = 8Amp
VR = 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
Max Units
VRRM
IF(AV)
IFSM
IFM
TJ, TSTG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current@ TC = 144°C
@ TC = 108°C (FULLPACK)
Non Repetitive Peak Surge Current @ TJ = 25°C
(FULLPACK)
Peak Repetitive Forward Current
Operating Junction and Storage Temperatures
600
8
90
100
16
- 65 to 175
V
A
°C
8ETH06
Case Styles
8ETH06S
8ETH06-1
8ETH06FP
Base
Cathode
2
1
Cathode
3
Anode
TO-220AC
www.irf.com
Base
Cathode
2
1
N/C
3
Anode
D2PAK
2
1
N/C
3
Anode
TO-262
1
Cathode
3
Anode
TO-220 FULLPACK
1

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8ETH06 pdf
60
IF = 16 A
IF = 8 A
50
40
30
20
V R = 390V
T J = 125˚C
T J = 25˚C
10
100
1000
di F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. di F /dt
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin PD-20746 rev. F 02/04
400
350
V R= 390V
T J = 125˚C
T J = 25˚C
300
IF = 16 A
IF = 8 A
250
200
150
100
50
0
100 1000
di F /dt (A/µs )
Fig. 10 - Typical Stored Charge vs. di F /dt
www.irf.com
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01
D.U.T.
diF /dt
dif/dt
ADJUST G
D
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
5

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