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PDF PHN405 Data sheet ( Hoja de datos )
| Número de pieza | PHN405 | |
| Descripción | 4 N-channel 60 mohm FET array enhancement mode MOS transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PHN405
4 N-channel 60 mΩ FET array
enhancement mode MOS
transistors
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13
1998 Mar 17
1 page  
Philips Semiconductors
4 N-channel 60 mΩ FET array
enhancement mode MOS transistors
Product specification
PHN405
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per FET
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
Coss
Crss
QG
QGS
QGD
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times
td(on)
turn-on delay time
tf fall time
ton turn-on switching time
td(off)
turn-off delay time
tr rise time
toff turn-off switching time
Current monitor
RDMon on-state drain-monitor resistance
IS/IM
CMoss
source to monitor current ratio
output capacitance of monitor cells
Source-drain diode
VSD source-drain diode forward voltage
trr reverse recovery time
CONDITIONS
MIN. TYP. MAX. UNIT
VGS = 0; ID = 10 µA
30
VGS = VDS; ID = 1 mA
1
VGS = 0; VDS = 24 V
−
VGS = ±20 V; VDS = 0
−
VGS = 4.5 V; ID = 1 A
−
VGS = 10 V; ID = 2 A
−
VGS = 0; VDS = 24 V; f = 1 MHz −
VGS = 0; VDS = 24 V; f = 1 MHz −
VGS = 0; VDS = 24 V; f = 1 MHz −
VGS = 10 V; VDD = 15 V; ID = 1 A −
VDD = 15 V; ID = 1 A;
−
VDD = 15 V; ID = 1 A;
−
−−V
− 2.8 V
− 100 nA
− ±100 nA
− 120 mΩ
− 60 mΩ
230 −
pF
90 −
pF
50 −
pF
7.1 10
nC
0.5 −
nC
2.4 −
nC
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6 Ω
−
−
−
−
−
−
3.5 −
3.5 −
7 10
12 −
8−
20 30
ns
ns
ns
ns
ns
ns
VGM = 10 V; ID = 25 mA; IS = 0
VGM = 4.5 V; ID = 12 mA; IS = 0
VGS = 10 V; ID = 2 A; VMS = 0
VGM = VMS = 0; VDS = 24 V;
f = 1 MHz
−
−
−
−
−4
−8
66.7 −
1.35 −
Ω
Ω
pF
VGD = 0; IS = 1.25 A
IS = 1.25 A; di/dt = −100 A/µs
−
−
−1
25 −
V
ns
1998 Mar 17
5
5 Page 
Philips Semiconductors
4 N-channel 60 mΩ FET array
enhancement mode MOS transistors
Product specification
PHN405
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 17
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PHN405.PDF ] | |
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