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PDF PHN103 Data sheet ( Hoja de datos )
| Número de pieza | PHN103 | |
| Descripción | N-channel enhancement mode MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PHN103
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1996 Nov 12
File under Discrete Semiconductors, SC13b
1997 Jun 20
1 page  
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
PHN103
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
Coss
Crss
QG
QGS
QGD
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times (see Fig.4)
VGS = 0; ID = 10 µA
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 24 V
VGS = ±20 V; VDS = 0
VGS = 4.5 V; ID = 2.75 A
VGS = 10 V; ID = 5.5 A
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 10 V; VDD = 15 V; ID = 4 A
VGS = 10 V; VDD = 15 V; ID = 4 A
VGS = 10 V; VDD = 15 V; ID = 4 A
td(on)
tr
ton
td(off)
tf
toff
turn-on delay time
rise time
turn-on switching time
turn-off delay time
fall time
turn-off switching time
Source-drain diode
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VSD
source-drain diode forward
VGD = 0; IS = 1.25 A
voltage
trr reverse recovery time
IS = 1.25 A; di/dt = 100 A/µs
MIN.
30
1
−
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
750
520
200
25
3
7.5
MAX.
−
2.8
100
±100
0.05
0.03
−
−
−
40
−
−
UNIT
V
V
nA
nA
Ω
Ω
pF
pF
pF
nC
nC
nC
− 7 − ns
− 10 − ns
− 17 35 ns
− 35 − ns
− 40 − ns
− 75 150 ns
−−1V
− 70 − ns
1997 Jun 20
5
5 Page 
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
PHN103
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 20
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PHN103.PDF ] | |
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