PDF PHC20512 Data sheet ( Hoja de datos )

Número de pieza	PHC20512
Descripción	Complementary enhancement mode MOS transistors
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET PHC20512 Complementary enhancement mode MOS transistors Product speciﬁcation Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 22 1 page Philips Semiconductors Complementary enhancement mode MOS transistors Product speciﬁcation PHC20512 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 20 UNIT K/W CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed. SYMBOL PARAMETER CONDITIONS Per channel V(BR)DSS VGSth IDSS IGSS drain-source breakdown voltage N-channel P-channel gate-source threshold voltage VGS = 0; ID = 10 µA VGS = 0; ID = −10 µA N-channel P-channel drain-source leakage current VGS = VDS; ID = 1 mA VGS = VDS; ID = −1 mA N-channel P-channel gate leakage current N-channel VGS = 0; VDS = 24 V VGS = 0; VDS = −24 V VGS = ±20 V; VDS = 0 P-channel RDSon Ciss Coss Crss QG QGS drain-source on-state resistance N-channel P-channel input capacitance VGS = 4.5 V; ID = 1.6 A VGS = 10 V; ID = 3.2 A VGS = −4.5 V; ID = −1 A VGS = −10 V; ID = −2 A N-channel P-channel output capacitance VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = −24 V; f = 1 MHz N-channel P-channel reverse transfer capacitance VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = −24 V; f = 1 MHz N-channel P-channel total gate charge VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = −24 V; f = 1 MHz N-channel P-channel gate-source charge VGS = 10 V; VDD = 15 V; ID = 3.2 A VGS = −10 V; VDD = −15 V; ID = −2 A N-channel P-channel VGS = 10 V; VDD = 15 V; ID = 3.2 A VGS = −10 V; VDD = −15 V; ID = −2 A MIN. TYP. MAX. UNIT 30 − − V −30 − − V 1− −1 − 2.8 V −2.8 V − − 100 nA − − −100 nA − − ±100 nA − − ±100 nA − − 0.1 Ω − − 0.05 Ω − − 0.25 Ω − − 0.12 Ω − 450 − pF − 450 − pF − 200 − pF − 200 − pF − 100 − pF − 100 − pF − 15 − nC − 13 − nC − 1 − nC − 1 − nC 1997 Oct 22 5 5 Page Philips Semiconductors Complementary enhancement mode MOS transistors Product speciﬁcation PHC20512 16 handbook, halfpage IS (A) 12 8 MGG347 (1) (2) (3) 4 0 0 0.4 VGD = 0. (1) Tamb = 150 °C; tp = 300 µs; δ = 0. (2) Tamb = 25 °C; tp = 300 µs; δ = 0. (3) Tamb = −65 °C; tp = 300 µs; δ = 0. 0.8 VSD (V) 1.2 Fig.16 Source current as a function of source-drain diode forward voltage; N-channel typical values. handbook−,1h0alfpage IS (A) −8 MGG356 −6 (1) (2) (3) −4 −2 0 0 −0.4 VGD = 0. (1) Tamb = 150 °C; tp = 300 µs; δ = 0. (2) Tamb = 25 °C; tp = 300 µs; δ = 0. (3) Tamb = −65 °C; tp = 300 µs; δ = 0. −0.8 VSD (V) −1.2 Fig.17 Source current as a function of source-drain diode forward voltage; P-channel typical values. 1997 Oct 22 11 11 Page

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