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Teilenummer | PF01410 |
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Beschreibung | MOS FET Power Amplifier Module for GSM Handy Phone | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 4 Seiten PF01410A
MOS FET Power Amplifier Module
for GSM Handy Phone
Application
• For GSM class4 890 to 915 MHz
Features
• 4.8 V operation 2 stage amplifier
• Small package
• High efficiency : 45% Typ
• High speed switching : 1 µsec
Pin Arrangement
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
10
3
4
50
–30 to +100
–30 to +100
4
ADE-208-424B (Z)
Product Preview
3rd. Edition
November 1997
Unit
V
A
V
mW
°C
°C
W
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ PF01410 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PF01410 | MOS FET Power Amplifier Module for GSM Handy Phone | Hitachi Semiconductor |
PF01410A | MOS FET Power Amplifier Module for GSM Handy Phone | Hitachi Semiconductor |
PF01411 | MOS FET Power Amplifier Module for E-GSM Handy Phone | Hitachi Semiconductor |
PF01411A | MOS FET Power Amplifier Module for E-GSM Handy Phone | Hitachi Semiconductor |
PF01411B | MOS FET Power Amplifier Module for E-GSM Handy Phone | Hitachi Semiconductor |
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