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PF01410 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer PF01410
Beschreibung MOS FET Power Amplifier Module for GSM Handy Phone
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 




Gesamt 4 Seiten
PF01410 Datasheet, Funktion
PF01410A
MOS FET Power Amplifier Module
for GSM Handy Phone
Application
For GSM class4 890 to 915 MHz
Features
4.8 V operation 2 stage amplifier
Small package
High efficiency : 45% Typ
High speed switching : 1 µsec
Pin Arrangement
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
10
3
4
50
–30 to +100
–30 to +100
4
ADE-208-424B (Z)
Product Preview
3rd. Edition
November 1997
Unit
V
A
V
mW
°C
°C
W





SeitenGesamt 4 Seiten
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