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PDF PEMD6 Data sheet ( Hoja de datos )
| Número de pieza | PEMD6 | |
| Descripción | NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = open | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD6
NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open
Product specification
Supersedes data of 2001 Oct 22
2001 Nov 07
1 page  
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Product specification
PEMD6
103
handbook, halfpage
hFE
(1)
(2)
(3)
MHC024
10120−1
1
10 102
IC (mA)
TR1 (NPN); VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
103
handbook, halfpage
VCEsat
(mV)
MHC025
102
(1)
(2)
(3)
1100−1
1
10 102
IC (mA)
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
103
handbook, halfpage
hFE
102
(1)
(2)
(3)
MHC026
10
−10−1
−1
−10 −102
IC (mA)
TR2 (PNP); VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
MHC027
−102
(1)
(2)
(3)
−10
−10−1
−1
−10 −102
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PEMD6.PDF ] | |
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