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Teilenummer | PEMD13 |
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Beschreibung | NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = 47 kohm | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 12 Seiten DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD13
NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Preliminary specification
2001 Sep 11
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Preliminary specification
PEMD13
103
handbook, halfpage
hFE
102
MGW403
(1)
(2)
(3)
10
1
−10−1
−1
−10 IC (mA) −102
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7 DC current gain as a function of collector
current; typical values.
−1
handbook, halfpage
VCEsat
(V)
MGW404
−10−1
(1)
(3) (2)
−10−2
−10−1
−1
−10 IC (mA) −102
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
handbook, halfpage
Vi(off)
(V)
−1
(1)
(2)
(3)
MGW405
−102
handbook, halfpage
Vi(on)
(V)
−10
−1
MGW406
(1)
(3) (2)
−10−1
−10−2
−10−1
−1 IC (mA) −10
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9 Input-off voltage as a function of collector
current; typical values.
−10−1
−10−1
−1
−10 IC (mA) −102
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Input-on voltage as a function of collector
current; typical values.
2001 Sep 11
6
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001
SCA73
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
613514/01/pp12
Date of release: 2001 Sep 11
Document order number: 9397 750 08614
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PEMD13 Schematic.PDF ] |
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