|
|
Número de pieza | PDTC143ZS | |
Descripción | NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PDTC143ZS (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143Z series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product specification
Supersedes data of 2004 Apr 06
2004 Aug 16
1 page Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product specification
PDTC143Z series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT883
SOT416
SOT490
CONDITIONS
in free air
note 1
note 1
note 1
note 1
notes 2 and 3
note 1
notes 1 and 2
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
VALUE
250
500
500
625
500
833
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0 A
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
VCE = 5 V; IC = 10 mA
IC = 5 mA; IB = 0.25 mA
IC = 100 µA; VCE = 5 V
IC = 5 mA; VCE = 0.3 V
RR-----21-- resistor ratio
Cc collector capacitance
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
MIN.
−
−
−
−
100
−
−
1.3
3.3
TYP.
−
−
−
−
−
−
0.6
0.9
4.7
MAX.
100
1
50
170
−
100
0.5
−
6.1
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
8 10 12
− − 2.5 pF
2004 Aug 16
5
5 Page Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Plastic surface mounted package; 3 leads
DB
Product specification
PDTC143Z series
SOT416
E AX
vM A
HE
3
1
e1 bp
e
2
wM B
Q
A
A1
Lp
detail X
c
0 0.5 1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1 HE Lp Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45 0.23
0.15 0.13
0.2
0.2
OUTLINE
VERSION
SOT416
IEC
REFERENCES
JEDEC
EIAJ
SC-75
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2004 Aug 16
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PDTC143ZS.PDF ] |
Número de pieza | Descripción | Fabricantes |
PDTC143Z | NPN resistor-equipped transistors | NXP Semiconductors |
PDTC143ZE | NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW | NXP Semiconductors |
PDTC143ZEF | NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW | NXP Semiconductors |
PDTC143ZK | NPN resistor-equipped transistor | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |