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Número de pieza | PDTC115ET | |
Descripción | NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PDTC115ET (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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DATA SHEET
PDTC115E series
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Product specification
Supersedes data of 2004 Apr 06
2004 Aug 06
1 page Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Product specification
PDTC115E series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT833
SOT490
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
VALUE
250
500
500
625
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
RR-----21--
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
VCB = 50 V; IE = 0 A
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
VCE = 5 V; IC = 5 mA
IC = 5 mA; IB = 0.25 mA
IC = 100 µA; VCE = 5 V
IC = 1 mA; VCE = 0.3 V
Cc collector capacitance
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
MIN.
−
−
−
−
80
−
−
3
70
0.8
TYP.
−
−
−
−
−
−
1.1
1.5
100
1
MAX.
100
1
50
50
−
150
0.5
−
130
1.2
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
− − 2.5 pF
2004 Aug 06
5
5 Page Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Plastic surface mounted package; 3 leads
DB
Product specification
PDTC115E series
SOT323
E AX
y
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
cD
E
e
e1 HE Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25 2.2
0.10 1.8
1.35 1.3 0.65 2.2 0.45 0.23 0.2
1.15 2.0 0.15 0.13
0.2
OUTLINE
VERSION
SOT323
IEC
REFERENCES
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2004 Aug 06
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PDTC115ET.PDF ] |
Número de pieza | Descripción | Fabricantes |
PDTC115E | NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW | NXP Semiconductors |
PDTC115EE | NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW | NXP Semiconductors |
PDTC115EEF | NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW | NXP Semiconductors |
PDTC115EK | NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW | NXP Semiconductors |
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