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PD55008 Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer PD55008
Beschreibung RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 10 Seiten
PD55008 Datasheet, Funktion
PD55008 - PD55008S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 8 W with 17 dB gain @ 500 MHz /
12.5V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55008 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55008’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol
Parameter
V(BR)DSS Drain Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 0C)
Tj Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
May 2000
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD55008
XPD55008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD55008S
XPD55008S
Value
40
±20
4
52.8
165
-65 to 165
1.8
Unit
V
V
A
W
OC
OC
OC/W
1/10






PD55008 Datasheet, Funktion
PD55008 - PD55008S
TYPICAL PERFORMANCE
Input Return Loss vs. Output Power
0
520MHz
-10
480MHz
-20
500MHz
-30
-40
0
VDD= 12.5V
IDQ= 150mA
2 4 6 8 10
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Bias Current
70
12
60
520MHz
50
500MHz
40 480MHz
30
VDD= 12.5V
20 Pin=21dBm
10
0
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
Drain Efficency vs. Supply Voltage
60
520 MHz
50
500 MHz
40
480 MHz
30
20
9
Idq=150 mA
Pin= 21dBm
10 11 12 13 14
VDD, SUPPLY VOLTAGE (V)
15
Output Power vs. Bias Current
12
10
480MHz
8
6 520MHz
500MHz
4
VDD= 12.5V
2 Pin=21 dBm
0
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
Output Power vs. Supply Voltage
11
10
9 480MHz
8 520MHz
500MHz
7
6
5
520MHz
4
Idq=150mA
Pin=21dBm
3
9 10 11 12 13 14 15
VDD, SUPPLY VOLTAGE (V)
Output Power vs. Gate-Source Voltage
12
10
8
6
480MHz
500MHz
4
520MHz
2
VDD= 12.5V
Pin=21dBm
0
0 12 3 4
VGS, GATE-SOURCE VOLTAGE (V)
6/10

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