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PD54008 Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer PD54008
Beschreibung RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 10 Seiten
PD54008 Datasheet, Funktion
PD54008 - PD54008S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD54008 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54008’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54008
XPD54008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54008S
XPD54008S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol
Parameter
V(BR)DSS Drain Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 0C)
Tj Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
May 2000
Value
25
±20
5
73
165
-65 to 165
1.3
Unit
V
V
A
W
0C
0C
0C/W
1/10






PD54008 Datasheet, Funktion
PD54008 - PD54008S
TYPICAL PERFORMANCE
Return Loss vs. Output Power
0
-10 520 MHz
-20 480 MHz
500MHz
-30
VDD = 7.5 V
IDQ= 150 mA
-40
0 1 2 3 4 5 6 7 8 9 10
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Bias Current
70
480 MHz
60
500 MHz
50 520 MHz
Output Power vs. Bias Current
12
10 480 MHz
8 520MHz
6
500 MHz
4
2
VDD = 7.5 V
PIN = 0.7 W
0
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
Output Power vs. Drain Voltage
20
480MHz
15
520MHz
10 500MHz
40
30
0
VDD =7.5 V
PIN = 0.7W
200 400 600 800
Idq, BIAS CURRENT (mA)
1000
Drain Efficency vs. Drain Voltage
70
60 480MHz
500MHz
50
520MHz
40
30
5
6/10
Idq =150mA
PIN= 0.7W
6 7 8 9 10 11
VDS, DRAIN-SOURCE VOLTAGE (V)
12
5
Idq= 150mA
PIN= 0.7W
0
5 6 7 8 9 10 11 12
VDS, DRAIN-SOURCE VOLTAGE (V)
Output Power vs. Gate Bias Voltage
10
480 MHz
8
520 MHz
6
500 MHz
4
2
VDD = 7.5 V
PIN = 0.7W
0
0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE BIAS VOLTAGE (V)

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