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PDF PD54003S Data sheet ( Hoja de datos )
| Número de pieza | PD54003S | |
| Descripción | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PD54003S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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PD54003 - PD54003S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD5400 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54003’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54003
XPD54003
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54003S
XPD54003S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol
Parameter
V(BR)DSS Drain Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 0C)
Tj Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
May 2000
Value
25
±20
4
52.8
165
-65 to 165
1.8
Unit
V
V
A
W
0C
0C
0C/W
1/10
1 page  
TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
PD54003 - PD54003S
Drain Efficiency vs. Supply Voltage
5.5
5
480MHz
4.5
500MHz
4
3.5
3
2.5
2
1.5
5
520MHz
Pin=23.3dBm
Idq=50mA
6789
VDD, SUPPLY VOLTAGE (V)
10
Output Power vs. Gate-Source Voltage
70
480MHz
60
500MHz
50
520MHz
40
30 Pin=23.3dBm
Idq=50mA
20
5
6789
VDD, SUPPLY VOLTAGE (V)
10
Output Power vs. Input Power
PD54003S
5
4 480MHz
3
500MHz
2
520MHz
1 Pin=23.3dBm
Vdd=7.5V
0
0 12 3
VGS, GATE-SOURCE VOLTAGE (V)
Power Gain vs. Output Power
4
5
480MHz
500MHz
4
520MHz
3
2
1 Vdd=7.5V
Idq=50mA
0
0 0.1 0.2 0.3 0.4
Pin, INPUT POWER (W)
Drain Efficiency vs. Output Power
0.5
16
14
12
10
8
6
0
480MHz
500MHz
520MHz
Vdd=7.5V
Idq= 50 mA
12 3
Pout, OUTPUT POWER (W)
4
70
60
50
40
30
20
10
0
500MHz
520MHz
480MHz
Vdd=7.5 V
Idq=50mA
12 3
Pout, OUTPUT POWER (W)
4
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PD54003S.PDF ] | |
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