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EL2008C Schematic ( PDF Datasheet ) - Elantec

Teilenummer EL2008C
Beschreibung 55 MHz 1 Amp Buffer Amplifier
Hersteller Elantec
Logo Elantec Logo 




Gesamt 12 Seiten
EL2008C Datasheet, Funktion
EL2008C
55 MHz 1 Amp Buffer Amplifier
Features
• High slew rate 2500 V/µs
• Wide bandwidth 100MHz @ RL =
50and 55MHz @ RL = 10
• Output current 1A continuous
• Output impedance 1
• Quiescent current 13mA
• Short circuit protected
• Power package with isolated metal
tab
Applications
• Video distribution amplifier
• Fast op amp booster
• Flash converter driver
• Motor driver
• Pulse transformer driver
• A.T.E. pin driver
Ordering Information
Part No.
EL2008CT
Temp. Range
0°C to +75°C
Package
TO-220
Outline#
MDP0028
Connection Diagrams
General Description
The EL2008C is a patented high speed bipolar monolithic buffer
amplifier designed to provide currents over 1 amp at high frequencies,
while drawing only 13 mA of quiescent supply current. The
EL2008C's 1500 V/µs slew rate and 55 MHz bandwidth driving a 10
load is second only to the EL2009 and insures stability in fast op amp
feedback loops. Elantec has applied for patents on unique circuitry
within the EL2008C.
Used as an open loop buffer, the EL2008C's low output impedance
(1) gives a gain of 0.99 when driving a 100load and 0.9 driving a
10load. The EL2008C has output short circuit current limiting
which will protect the device under both a DC fault condition and AC
operation with reactive loads.
The EL2008C is constructed using Elantec's proprietary Complemen-
tary Bipolar process that produces PNP and NPN transistors with
essentially identical AC and DC characteristics. In the EL2008C, the
Complementary Bipolar process also insulates the package's metal
heat sink tab from all supply voltages. Therefore the tab may be
mounted to an external heat sink or the chassis without an insulator.
The EL2008CT is specified for operation over the 0°C to +75°C tem-
perature range and is provided in a 5-lead TO-220 plastic power
package.
Simplified Schematic
5-Pin TO-220
Top View
Manufactured under U.S. Patent No. 4,833,424 and 4,827,223 and U.K. Patent No. 2217134.
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.






EL2008C Datasheet, Funktion
EL2008C
55 MHz 1 Amp Buffer Amplifier
Burn-In Circuit
Applications Information
The EL2008C is a monolithic buffer amplifier built on
Elantec's proprietary dielectric isolation process that
produces NPN and PNP transistors with essentially
identical DC and AC characteristics. The EL2008C
takes full advantage of the complementary process with
a unique circuit topology.
Elantec has applied for two patents based on the
EL2008C's topology. The patents relate to the base drive
and feedback mechanism in the buffer. This feedback
makes 3000 V/µs slew rates with 10load possible with
modest supply current.
Power Supplies
The EL2008C may be operated with single or split sup-
plies with total voltage difference between 10V (±5V)
and 36V (±18V). However, bandwidth, slew rate and
output impedance are affected by total supply voltages
below 20V (±10V) as shown by the characteristic
curves. It is not necessary to use equal split value sup-
plies. For example -5V and +12V would be excellent for
signals from -2V to +9V.
Bypass capacitors from each supply pin to ground are
highly recommended to reduce supply ringing and the
interference it can cause. At a minimum a 10 µF tanta-
lum capacitor in parallel with a 0.1 µF capacitor with
short leads should be used for both supplies.
Input Characteristics
The input to the EL2008C looks like a resistance in par-
allel with about 25 pF in addition to a DC bias current.
The DC bias current is due to the mismatch in beta and
collector current between the NPN and PNP transistors
connected to the input pin. The bias current can be either
positive or negative. The change in input current with
input voltage (RIN) is affected by the output load, beta
and the internal boost. RIN can actually appear negative
over portions of the input range in some units. A few
typical input current (IIN) curves are shown in the char-
acteristic curves.
Internal clamp diodes from the input to the output are
provided. These diodes protect the transistor base emit-
ter junctions and limit the boost current during slew to
avoid saturation of internal transistors. The diodes begin
conduction at about ±2.5V input to output differential.
When that happens the input resistance drops dramati-
cally. The diodes are rated at 50 mA. When conducting
6

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EL2008C pdf, datenblatt
EL2008C
55 MHz 1 Amp Buffer Amplifier
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the cir-
cuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
(888) ELANTEC
Fax: (408) 945-9305
European Office: +44-118-977-6020
Japan Technical Center: +81-45-682-5820
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to sup-
port or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users con-
templating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elan-
tec, Inc.’s warranty is limited to replacement of defective
components and does not cover injury to persons or property or
other consequential damages.
12 Printed in U.S.A.

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