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Teilenummer | EG1 |
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Beschreibung | Silicon Diode | |
Hersteller | Sanken electric | |
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Gesamt 4 Seiten SANKEN ELECTRIC CO., LTD.
1 Scope
The present specifications shall apply to an EG1.
2 Outline
Type
Silicon Diode
Structure
Resin Molded
Applications
High Frequency Rectification
EG1
3 Flammability
UL94V-0(Equivalent)
4 Absolute maximum ratings
No. Item
Symbol Unit
Rating
Conditions
1 Transient Peak Reverse Voltage VRSM
2 Peak Reverse Voltage
VRM
3 Average Forward Current
IF(AV)
4 Peak Surge Forward Current
5 I2t Limiting Value
IFSM
I2t
V
V
A
A
A2s
400
400
0.8
15
1.125
Refer to derating curve
in Section 7
10ms.
Half sine wave, one shot
1ms≦t≦10ms
6 Junction Temperature
7 Storage Temperature
Tj °C
Tstg °C
-40 to +150
-40 to +150
5 Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Rating
Conditions
1 Forward Voltage Drop
VF V
2 Reverse Leakage Current
IR
3
Reverse Leakage Current Under
High Temperature
H・IR1
H・IR2
uA
uA
mA
4 Reverse Recovery Time
trr-1 ns
trr-2 ns
5 Thermal Resistance
Rth(j-l) °C/W
1.8 max.
50 max.
300 max.
3.0 max.
100 max.
50 max.
17 max.
IF=0.8A
VR=VRM
VR=VRM, Tj=100°C
VR=VRM, Tj=150°C
IF=IRP=100mA
90% Recovery point, Tj=25°C
IF=100mA, IRP=200mA
75% Recovery point, Tj=25°C
Between Junction and Lead
050607
1/4
61426-01
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ EG1 Schematic.PDF ] |
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