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PDF EDS2516APSA Data sheet ( Hoja de datos )
| Número de pieza | EDS2516APSA | |
| Descripción | 256M bits SDRAM | |
| Fabricantes | Elpida Memory | |
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DATA SHEET
256M bits SDRAM
EDS2508APSA (32M words × 8 bits)
EDS2516APSA (16M words × 16 bits)
Description
The EDS2508AP is a 256M bits SDRAM organized as
8,388,608 words × 8 bits × 4 banks. The EDS2516AP
is a 256M bits SDRAM organized as 4194304 words ×
16 bits × 4 banks. All inputs and outputs are referred to
the rising edge of the clock input. It is packaged in
standard 60-ball µBGA.
Features
• 3.3V power supply
• Clock frequency: 133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and
independently
• Burst read/write operation and burst read/single write
operation capability
• Programmable burst length (BL): 1, 2, 4, 8, full page
• 2 variations of burst sequence
Sequential (BL = 1, 2, 4, 8)
Interleave (BL = 1, 2, 4, 8)
• Programmable /CAS latency (CL): 2, 3
• Byte control by DQM
: DQM (EDS2508AP)
: UDQM, LDQM (EDS2516AP)
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
Auto refresh
Self refresh
Pin Configurations
/xxx indicates active low signal.
123456
A
VSS DQ15
(DQ7)*
B
DQ14 VSSQ
(NC)*
C
DQ13 VDDQ
(DQ6)*
D
DQ12 DQ11
(NC)* (DQ5)*
E
DQ10 VSSQ
(NC)*
F
DQ9 VDDQ
(DQ4)*
G
DQ8 NC
(NC)*
H
NC VSS
J
NC UDQM
(DQM)*
K
NC CLK
L
CKE A12
M
A11 A9
N
A8 A7
P
A6 A5
R
VSS A4
DQ0 VDD
VDDQ DQ1
(NC)*
VSSQ DQ2
(DQ1)*
DQ4 DQ3
(DQ2)* (NC)*
VDDQ DQ5
(NC)*
VSSQ DQ6
(DQ3)*
NC DQ7
(NC)*
VDD NC
LDQM /WE
(NC)*
/RAS /CAS
NC /CS
BA1 BA0
A0 A10
A2 A1
A3 VDD
(Top view)
Note: ( )* marked pins are for EDS2508APSA.
A0 to A12, Address input
BA0, BA1 Bank select address
DQ0 to DQ15 Data-input/output
/CS Chip select
/RAS
Row address strobe
/CAS
Column address strobe
/WE Write enable
DQM
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC
Input/output mask
Clock enable
Clock input
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
Document No. E0228E30 (Ver. 3.0)
Date Published August 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc.2001-2002
1 page  
EDS2508APSA, EDS2516APSA
DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
Parameter
max .
/CAS latency
Symbol
Grade × 8
× 16
Unit Test condition
Notes
Operating current
ICC1
-7A 130
135
mA
Burst length = 1
tRC = tRC (min.)
1, 2, 3
ICC1
-75 110
115
mA
Burst length = 1
tRC = tRC (min.)
Standby current in power
down
ICC2P
3
3
mA
CKE = VIL,
tCK = tCK (min.)
6
Standby current in power
down (input signal stable)
ICC2PS
2 2 mA CKE = VIL, tCK = ∞
Standby
down
current
in
non
power
ICC2N
20
20
mA
CKE, /CS = VIH,
tCK = tCK (min.)
4
Standby current in
down (input signal
non power
stable)
ICC2NS
9
9
mA
CKE = VIH, tCK = ∞, /CS
= VIH
8
Active standby current in
power down
ICC3P
4
4
mA
CKE = VIL,
tCK = tCK (min.)
1, 2, 6
Active standby current in
power down (input signal
stable)
ICC3PS
3
3
mA CKE = VIL, tCK = ∞
2, 7
Active standby current in non
power down
ICC3N
30
30
mA
CKE, /CS = VIH,
tCK = tCK (min.)
1, 2, 4
Active standby current in non
power down (input signal ICC3NS
stable)
15
15
mA
CKE = VIH, tCK = ∞, /CS
= VIH
2, 8
Burst operating current
ICC4
135 145 mA tCK = tCK (min.), BL = 4 1, 2, 5
Refresh current
ICC5
-7A 250
250
mA tRC = tRC (min.)
3
ICC5
-75 220
220
mA tRC = tRC (min.)
Self refresh current
ICC6
3
3
mA
VIH ≥ VDD – 0.2V
VIL ≤ 0.2V
Self refresh current
(L-version)
ICC6
-XXL 1
1
mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
Parameter
Symbol min.
max.
Unit Test condition
Notes
Input leakage current
Output leakage current
ILI –1
ILO –1.5
1
1.5
µA 0 ≤ VIN ≤ VDD
µA 0 ≤ VOUT ≤ VDD, DQ = disable
Output high voltage
VOH
2.4
—
V IOH = –4 mA
Output low voltage
VOL
—
0.4 V IOL = 4 mA
Data Sheet E0228E30 (Ver. 3.0)
5
5 Page 
EDS2508APSA, EDS2516APSA
[Output High Current (IOH)]
VOUT (V)
3.45
3.3
3
2.6
2.4
2
1.8
1.65
1.5
1.4
1
0
IOH
min. (mA)
—
—
0
–21
–34
–59
–67
–73
–78
–81
–89
–93
IOH
max. (mA)
–3
–28
–75
–130
–154
–197
–227
–248
–270
–285
–345
–503
0
0
–100
0.5
1 1.5 2
2.5 3
3.5
–200
–300
min.
max.
–400
–500
–600
VOUT(V)
Output High Current (IOH)
Data Sheet E0228E30 (Ver. 3.0)
11
11 Page | ||
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