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PDF APM2306 Data sheet ( Hoja de datos )

Número de pieza APM2306
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Etc 
Logotipo Etc Logotipo



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No Preview Available ! APM2306 Hoja de datos, Descripción, Manual

APM2306
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/3.5A,
RDS(ON)=70m(typ.)
@
V =5V
GS
RDS(ON)=42m(typ.) @ VGS=10V
Super High Dense Cell Design
High Power and Current Handling Capability
SOT-23 Package
Applications
Switching Regulators
Switching Converters
D
3
12
GS
Top View of SOT-23
Ordering and Marking Information
APM2306
H andling C ode
Temp. Range
Package Code
Package Code
A : SOT-23
O perating Junction Tem p. R ange
C : -55 to 1 50°C
H andling C ode
TR : Tape & Reel
APM2306 A :
M06X
X - Date Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
V
±20
ID Maximum Pulsed Drain Current ( pulse width 300µs)
IDM Maximum Drain Current – Pulsed
3.5
16
A
PD Maximum Power Dissipation
TA=25°C
TA=100°C
1.25
0.5
W
W
TJ Maximum Junction Temperature
150 °C
TSTG Storage Temperature Range
-55 to 150
°C
AcuNsPtEoCmererssetroveosbttahien
right to make changes to improve reliability
the latest version of relevant information to
or manufacturability
verify before placing
without
orders.
notice,
and
advise
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
1
www.anpec.com.tw

1 page




APM2306 pdf
APM2306
Typical Characteristics
Source-Drain Diode Forward Voltage
30
10
TJ=150°C
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
14
12
10
8
6
4
2
0
0.01
Single Pulse Power
0.1 1 10
Time (sec)
100
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
SINGLE PULSE
1E-4 1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
0.01 0.1 1 10
Square Wave Pulse Duration (sec)
100
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
5
www.anpec.com.tw

5 Page










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