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Número de pieza | APM2301A | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | Etc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APM2301A (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! APM2301A
Features
• -20V/-2.8A,
RDS(ON)=72mΩ(typ.) @ VGS=-10V
RDS(ON)=98mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
P-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23
S
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
G
D
P-Channel MOSFET
APM2301A
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2301A A : A01X
X - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Mar., 2009
1
www.anpec.com.tw
1 page APM2301A
Typical Operating Characteristics (Cont.)
Output Characteristics
10
9
8
V = -3.5,-4,-4.5,-5V
GS
7
6 -3V
5
4
3 -2.5V
2
1 -2V
0
012345
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
140
130
120
V =-4.5V
110 GS
100
90
80 V =-10V
GS
70
60
50
40
30
0 2 4 6 8 10
-ID - Drain Current (A)
10
9
8
7
6
5
4
3
2
1
0
0.0
Transfer Characteristics
T =125oC
j
T =25oC
j
T =-55oC
j
0.5 1.0 1.5 2.0 2.5 3.0
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I=
DS
-250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Mar., 2009
5
www.anpec.com.tw
5 Page APM2301A
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Mar., 2009
11
www.anpec.com.tw
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet APM2301A.PDF ] |
Número de pieza | Descripción | Fabricantes |
APM2301 | P-Channel Enhancement Mode MOSFET | Etc |
APM2301 | P-Channel Enhancement Mode MOSFET | Anpec Electronics |
APM2301A | P-Channel Enhancement Mode MOSFET | Etc |
APM2301A | P-Channel Enhancement Mode MOSFET | Anpec Electronics |
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