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Teilenummer | G-100 |
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Beschreibung | Detector Components | |
Hersteller | Electro-Optical Systems | |
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Gesamt 1 Seiten Detector Components
1.00 dia
GND
G-100 Chip
0.20
0.50
0.71 dia BC
Anode
Case Ground Pin
Cathode
Part No:
G – 100
ELECTRO OPTICAL SYSTEMS
offers room temperature
photodiode detectors.
The units have state-of-the-art
sensitivity and may be
supported by accessories
such as optical filters
(longpass and bandpass),
integral preamplifiers,
and infrared source assemblies.
These units find applications in
industrial control systems,
gas analyzers, thermal sensors,
and general infrared
instrumentation.
SPECIFICATIONS FOR G-100 PHOTODIODE
Active Area (mm)
10 x 10
Operating Wavelength (µm)
1.0 – 1.8
Shunt Resistance (Ω)
2k min ; 4k typ
Shunt Capacitance (pF)
30000 typ
Responsivity (A/W)
0.9 @ 1.55 µm
NEP (W/Hz½)
< 3.5 x 10 –12 @ 1.55 µm
Electro - Optical Systems Inc, 1039 West Bridge St, Phoenixville, PA 19460
Tel: 610-935-5838 (Fax: -8548) www.eosystems.com [email protected]
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ G-100 Schematic.PDF ] |
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