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WS57C51C-45D Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer WS57C51C-45D
Beschreibung HIGH SPEED 16K x 8 CMOS PROM/RPROM
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 7 Seiten
WS57C51C-45D Datasheet, Funktion
WS57C51C
HIGH SPEED 16K x 8 CMOS PROM/RPROM
KEY FEATURES
Very Fast Access Time
35 ns
Low Power Consumption
Fast Programming
Pin Compatible with Am27S51
and N82HS1281
Immune to Latch-Up
Up to 200 mA
ESD Protection Exceeds 2000 V
GENERAL DESCRIPTION
The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts.
A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM
technology. This enables the entire memory array to be tested for switching characteristics and functionality after
assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100% tested with
worst case test patterns both before and after assembly.
The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM
footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software,
hardware or layout changes need be performed.
BLOCK DIAGRAM
8
A6 - A13
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
131,072 BITS
6
A0 - A5
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
CS4
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP
A9 1
A5
4
5
3
2
1
32 31 30
29
A12
A8 2
A7 3
A4 6
28 A13
A6 4
A3 7
A2 8
27
26
CS1/VPP
CS2
A5 5
A4 6
A1 9
25 CS3
A0 10
24 CS4
NC 11
23 NC
O0 12
22 O7
O1 13
21 O6
14 15 16 17 18 19 20
A3 7
A2 8
A1 9
A0 10
O0 11
O1 12
O2 13
O2 NC O3 NC O4 O5
GND 14
28 VCC
27 A10
26 A11
25 A12
24 A13
23 CS1/VPP
22 CS2
21 CS3
20 CS4
19 O7
18 O6
17 O5
16 O4
15 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
57C51C-35
35 ns
20 ns
57C51C-45
45 ns
20 ns
57C51C-55
55 ns
25 ns
57C51C-70
70 ns
30 ns
Return to Main Menu
2-47






WS57C51C-45D Datasheet, Funktion
WS57C51C
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN MAX
ILI
Input Leakage Current
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
Programming Pulse
ICC VCC Supply Current
VOL
Output Low Voltage During Verify
(IOL = 16 mA)
VOH
Output High Voltage During Verify
(IOH = –4 mA)
–10 10
60
25
0.45
2.4
NOTE: 7. VPP must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN TYP MAX
tAS Address Setup Time
tDF Chip Disable Setup Time
tDS Data Setup Time
tPW Program Pulse Width
tDH Data Hold Time
tCS Chip Select Delay
tRF VPP Rise and Fall Time
2
2
100
2
1
30
200
30
PROGRAMMING WAVEFORM
UNITS
µA
mA
mA
V
V
UNITS
µs
ns
µs
µs
µs
ns
µs
ADDRESSES
VIH
VIL
DATA
VIH
VIL
VPP
CS1/VPP
VIH
VIL
tDF
tAS
tDS
ADDRESS STABLE
DATA IN
tPW
tDH
DATA OUT
tCS
tRF
tRF
2-52

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