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WS57C49C Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer WS57C49C
Beschreibung HIGH SPEED 8K x 8 CMOS PROM/RPROM
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 7 Seiten
WS57C49C Datasheet, Funktion
WS57C49C
HIGH SPEED 8K x 8 CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— tACC = 25 ns
— tCS = 12 ns
Low Power Consumption
Fast Programming
Pin Compatible with Bipolar PROMs
Immune to Latch-UP
— Up to 200 mA
ESD Protection Exceeds 2000 V
Available in 300 Mil DIP and PLDCC
GENERAL DESCRIPTION
The WS57C49C is a High Performance 64K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the
WS57C49C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the
entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which
cannot be erased, every WS57C49C in a windowed package is 100% tested with worst case test patterns both
before and after assembly.
The WS57C49C is configured in the standard Bipolar PROM pinout which provides an easy upgrade path for
systems which are currently using Bipolar PROMs, or its predecessor, the WS57C49B.
BLOCK DIAGRAM
8
A5 - A12
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
65,536 BITS
5
A0 - A4
COLUMN
ADDRESSES
COLUMN
DECODER
SENSE
AMPLIFIERS
CS1/ VPP
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP/Plastic DIP
Flatpack
NC
A5 A6 A7 VCC A8 A9
A7 1
A4
4
5
3
2
1
28 27 26
25
A10
A6 2
A5 3
A3
A2
A1
A0
NC
O0
6 24
7 23
8 22
9 21
10 20
11 19
12 13 14 15 16 17 18
CS1/VPP
A11
A12
NC
A4
A3
A2
A1
4
5
6
7
O7
O6
A0 8
O0 9
O1 10
O2 11
O1 O2 NC O3 O4 O5
GND
GND 12
24 VCC
23 A8
22 A9
21 A10
20 CS1/VPP
19 A11
18 A12
17 O7
16 O6
15 O5
14 O4
13 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
57C49C-25
25 ns
12 ns
57C49C-35
35 ns
20 ns
57C49C-45
45 ns
25 ns
57C49C-55
55 ns
25 ns
57C49C-70
70 ns
25 ns
Return to Main Menu
2-39






WS57C49C Datasheet, Funktion
WS57C49C
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN MAX
ILI
Input Leakage Current
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
Programming Pulse
ICC VCC Supply Current
VOL
Output Low Voltage During Verify
(IOL = 16 mA)
VOH
Output High Voltage During Verify
(IOH = –4 mA)
–10 10
60
35
0.45
2.4
NOTES: 7. VPP must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN TYP MAX
tAS Address Setup Time
tDF Chip Disable Setup Time
tDS Data Setup Time
tPW Program Pulse Width
tDH Data Hold Time
tCS Chip Select Delay
tRF VPP Rise and Fall Time
2
2
100
2
1
30
200
30
PROGRAMMING WAVEFORM
UNITS
µA
mA
mA
V
V
UNITS
µs
ns
µs
µs
µs
ns
µs
ADDRESSES
VIH
VIL
DATA
VIH
VIL
VPP
CS1/VPP
VIH
VIL
tDF
tAS
tDS
ADDRESS STABLE
DATA IN
tPW
tDH
DATA OUT
tCS
tRF
tRF
2-44

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