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WS57C191C-25J Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer WS57C191C-25J
Beschreibung HIGH SPEED 2K x 8 CMOS PROM/RPROM
Hersteller STMicroelectronics
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Gesamt 7 Seiten
WS57C191C-25J Datasheet, Funktion
WS57C191C/291C
HIGH SPEED 2K x 8 CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— tACC = 25 ns
— tCS = 12 ns
Low Power Consumption
Fast Programming
Available in 300 Mil DIP and PLDCC
Pin Compatible with Am27S191/291
and N82S191 Bipolar PROMs
Immune to Latch-UP
— Up to 200 mA
ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read
Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar
PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C
is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are
currently using Bipolar PROMs.
The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier
(PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil
DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges.
BLOCK DIAGRAM
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP/Plastic DIP
NC
A5 A6 A7 VCC A8 A9
A7 1
A4
4
5
3
2
1
28 27 26
25
A10
A6 2
A5 3
A3 6
A2 7
24
23
CS1/VPP
CS2
A4
A3
4
5
A1 8
22 CS3
A0 9
21 NC
NC 10
20 O7
O0 11
19 O6
12 13 14 15 16 17 18
A2 6
A1 7
A0 8
O0 9
O1 10
O2 11
O1 O2 NC O3 O4 O5
GND
GND 12
24 VCC
23 A8
22 A9
21 A10
20 CS1/VPP
19 CS2
18 CS3
17 O7
16 O6
15 O5
14 O4
13 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
191C/291C-25
25 ns
12 ns
191C/291C-35
35 ns
20 ns
191C/291C-45
45 ns
20 ns
191C/291C-55
55 ns
20 ns
Return to Main Menu
2-7






WS57C191C-25J Datasheet, Funktion
WS57C191C/291C
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN MAX
ILI
Input Leakage Current
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
Programming Pulse
ICC VCC Supply Current
VOL
Output Low Voltage During Verify
(IOL = 16 mA)
VOH
Output High Voltage During Verify
(IOH = –4 mA)
–10 10
60
25
0.45
2.4
NOTES: 8. VPP must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN TYP MAX
tAS Address Setup Time
tDF Chip Disable Setup Time
tDS Data Setup Time
tPW Program Pulse Width
tDH Data Hold Time
tCS Chip Select Delay
tRF VPP Rise and Fall Time
2
2
100
2
1
30
200
30
PROGRAMMING WAVEFORM
UNITS
µA
mA
mA
V
V
UNITS
µs
ns
µs
µs
µs
ns
µs
VIH
ADDRESSES
VIL
VIH
DATA
VIL
VPP
VIH
CS1/VPP
VIL
VIH
CS2/CS3
VIL
tDF
tAS
tDS
ADDRESS STABLE
DATA IN
tPW
tDH
DATA OUT
tCS
tRF tRF
DON'T CARE
2-12

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