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Teilenummer | WMBTA42 |
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Beschreibung | NPN EPITAXIAL SILICON TRANSISTORS | |
Hersteller | Wing Shing Computer Components | |
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Gesamt 1 Seiten NPN EPITAXIAL SILICON TRANSISTORS
WMBTA42
High Voltage Transistor
Die Size 0.6*0.6mm
** Power Dissipation: 225mW
* Collector Current: Max. 500mA
* Bonding Pad Size
Emitoe 100*100mkm
Base 100*100mkm
SOT——23
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃)
Characteristic Symbol
Test Conditions
Collector-emitter
Breakdown Voltage
VCEO
IC=1.0mA
Limits
Units
Min Typ Max
300 -
-
V
Collector-Base
Breakdown Voltage
VCBO
IC=100uA
300 - -
V
Collector Cut-off
Current
ICBO VCB=260V
- - 100 nA
Emitter Cut-off
Current
IEBO VEB=6V
- - 100 nA
DC Current Gain
VCE=10V, IC=1mA
hFE VCE=10V, IC=10mA
VCE=10V, IC=30mA
30
40 -
40
-
Base-Emitter
Saturation Voltage
VBEsat IC=20mA, Ib=2mA
- - 0.90 V
Collector-Emitter
Saturation Voltage
VCEsat IC=20mA, IB=2mA
- - 0.35 V
Transition
Frequency
fr
VCE=20V,
IC=10mA,f=10MHz
50 -
- MHz
Collector-Base
Capacitance
Ccb VCB=20V, f=1MHz
- - 3.0 pF
NOTES: Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ WMBTA42 Schematic.PDF ] |
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