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PDF WMBT5551LT1 Data sheet ( Hoja de datos )
| Número de pieza | WMBT5551LT1 | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | Wing Shing Computer Components | |
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NPN Silicon Transistor
COLLECTOR
3
WMBT5551LT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
VCEO
VCBO
160
180
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VEBO
IC
6.0
600
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
– 55 to +150
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB =5.0 Vdc, IC = 0)
V(BR)EBO
ICBO
IEBO
3
1
2
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
—
160 —
Vdc
—
180 —
Vdc
6.0 —
— nAdc
— 50
— µAdc
— 50
nAdc
— 50
Wing Shing Computer Components Co., (H.K .)L td.
Homepage: http: / / www.wingshing.com
Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153
E-mail: wsccltd@ hk star.com
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet WMBT5551LT1.PDF ] | |
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