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Teilenummer | W49L102P-55 |
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Beschreibung | 64K X 16 CMOS 3.3V FLASH MEMORY | |
Hersteller | Winbond | |
Logo | ||
Gesamt 21 Seiten Preliminary W49L102
64K × 16 CMOS 3.3V FLASH MEMORY
GENERAL DESCRIPTION
The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The
device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W49L102 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 3.3-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
• Single 3.3-volt operations:
− 3.3-volt Read
− 3.3-volt Erase
− 3.3-volt Program
• Fast Program operation:
− Word-by-Word programming: 50 µS (max.)
• Fast Erase operation: 100 mS (typ.)
• Fast Read access time: 55/70/90 nS
• Endurance: 1K/10K cycles (typ.)
• Twenty-year data retention
• Hardware data protection
• 8K word Boot Block with Lockout protection
• Low power consumption
− Active current: 15 mA (typ.)
− Standby current: 10 µA (typ.)
• Automatic program and erase timing with
internal VPP generation
• End of program or erase detection
− Toggle bit
− Data polling
• Latched address and data
• TTL compatible I/O
• JEDEC standard word-wide pinouts
• Available packages: 40-pin TSOP and 44-pin
PLCC
Publication Release Date: June 1999
- 1 - Revision A1
Preliminary W49L102
Command Codes for Word Program
WORD SEQUENCE
0 Write
1 Write
2 Write
3 Write
ADDRESS
5555H
2AAAH
5555H
Programmed-Address
Word Program Flow Chart
Word Program
Command Flow
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data A0
to
address 5555
Load data Din
to
programmed-
address
DATA
AAH
55H
A0H
Programmed-Data
Pause 50 µS
Exit
Notes for software program code:
Data Format: DQ15−DQ0 (Hex); XX = Don't Care
Address Format: A14−A0 (Hex)
-6-
6 Page Preliminary W49L102
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
SYMBOL
TPU. READ
TPU. WRITE
TYPICAL
200
10
CAPACITANCE
(VDD = 3.3V, TA = 25° C, f = 1 MHz)
PARAMETER
I/O Pin Capacitance
Input Capacitance
SYMBOL
CI/O
CIN
CONDITIONS
VI/O = 0V
VIN = 0V
MAX.
12
6
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise/Fall Time
Input/Output Timing Level
Output Load
AC Test Load and Waveform
CONDITIONS
0.4V/2.4V
< 5 nS
1.5V/1.5V
1 TTL Gate and CL = 30 pF for 55/70 nS
CL = 100 pF for 90 nS
+3.3V
UNIT
µS
mS
UNIT
pf
pf
D OUT
30 pF for 55/70 nS
100 pF for 90 nS
(Including Jig and Scope)
1.8K Ω
1.3K Ω
Input
2.4V
0.4V
Output
1.5V 1.5V
Test Point
Test Point
- 12 -
12 Page | ||
Seiten | Gesamt 21 Seiten | |
PDF Download | [ W49L102P-55 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
W49L102P-55 | 64K X 16 CMOS 3.3V FLASH MEMORY | Winbond |
W49L102P-55B | 64K X 16 CMOS 3.3V FLASH MEMORY | Winbond |
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