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Teilenummer | W49F201S-55B |
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Beschreibung | 128K X 16 CMOS FLASH MEMORY | |
Hersteller | Winbond | |
Logo | ||
Gesamt 23 Seiten Preliminary W49F201
128K × 16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W49F201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
• Single 5-volt operations:
− 5-volt Read/Erase/Program
• Fast Program operation:
− Word-by-Word programming: 50 µS (max.)
• Fast Erase operation: 60 mS (typ.)
• Fast Read access time: 45/55 nS
• Endurance: 1K/10K cycles (typ.)
• Ten-year data retention
• Hardware data protection
• Sector configuration
− One 8K words boot block with lockout
protection
− Two 8K words parameter blocks
− One 104K words (208K bytes) Main Memory
Array Blocks
• Low power consumption
− Active current: 25 mA (typ.)
− Standby current: 20 µA (typ.)
• Automatic program and erase timing with
internal VPP generation
• End of program or erase detection
− Toggle bit
− Data polling
• Latched address and data
• TTL compatible I/O
• JEDEC standard word-wide pinouts
• Available packages: 44-pin SOP, 48-pin TSOP
Publication Release Date: June 1999
- 1 - Revision A1
Preliminary W49F201
TABLE OF COMMAND DEFINITION
COMMAND
NO. OF 1ST CYCLE 2ND CYCLE 3RD CYCLE 4TH CYCLE 5TH CYCLE 6TH CYCLE
DESCRIPTION
Cycles Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
Read
1 AIN DOUT
Chip Erase
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
Main Memory Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA 30
Word Program
4 5555 AA 2AAA 55 5555 A0 AIN DIN
Boot Block Lockout
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID Entry
Product ID Exit (1)
Product ID Exit (1)
3 5555 AA 2AAA 55 5555 90
3 5555 AA 2AAA 55 5555 F0
1 XXXX F0
Notes:
1. Address Format: A14−A0 (Hex); Data Format: DQ15−DQ8 (Don't Care); DQ7-DQ0 (Hex)
2. Either one of the two Product ID Exit commands can be used.
3. SA: Sector Address
SA = 03XXXh for Parameter Block1
SA = 05XXXh for Parameter Block2
SA = 1FXXXh
- for Main Memory Block when Boot Block lockout feature is activated
- for both Boot Block and Main Memory Block when Boot Block lockout feature is inactivated
-6-
6 Page Preliminary W49F201
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to Vss Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except OE
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
Voltage on OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to VDD +1.0
-1.0 to VDD +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Power Supply
Current
ICC CE=OE= VIL, WE= VIH, all DQs open - 25 50 mA
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD
Current (TTL input)
ISB1 CE = VIH, all DQs open
Other inputs = VIL/VIH
-2
3 mA
Standby VDD
Current
(CMOS input)
ISB2 CE = VDD -0.3V, all DQs open
Other inputs = VDD -0.3V/GND
- 20 100 µA
Input Leakage
Current
ILI VIN = GND to VDD
--
10 µA
Output Leakage
Current
ILO VOUT = GND to VDD
--
10 µA
Input Low Voltage
VIL
- -0.3 - 0.8 V
Input High Voltage VIH - 2.0 - VDD +0.5 V
Output Low Voltage VOL IOL = 2.1 mA
- - 0.45 V
Output High Voltage VOH IOH = -0.4 mA
2.4 - - V
- 12 -
Publication Release Date: June 1999
Revision A1
12 Page | ||
Seiten | Gesamt 23 Seiten | |
PDF Download | [ W49F201S-55B Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
W49F201S-55 | 128K X 16 CMOS FLASH MEMORY | Winbond |
W49F201S-55B | 128K X 16 CMOS FLASH MEMORY | Winbond |
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