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PCF2100 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PCF2100
Beschreibung LCD drivers
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 24 Seiten
PCF2100 Datasheet, Funktion
INTEGRATED CIRCUITS
DATA SHEET
PCF21xxC family
LCD drivers
Product specification
Supersedes data of 1995 May 03
File under Integrated Circuits, IC12
1997 Mar 28






PCF2100 Datasheet, Funktion
Philips Semiconductors
LCD drivers
6 PINNING
6.1 PCF2100C
SYMBOL
CLB
VDD
OSC
VSS
S20
S19
S18
S17
S16
S15
S14
S13
S12
S11
S10
S9
S8
S7
S6
S5
S4
S3
S2
S1
BP2
BP1
DATA
DLEN
PIN DESCRIPTION
1 clock burst input (CBUS)
2 supply voltage
3 oscillator input
4 supply voltage ground
5 LCD driver output 20
6 LCD driver output 19
7 LCD driver output 18
8 LCD driver output 17
9 LCD driver output 16
10 LCD driver output 15
11 LCD driver output 14
12 LCD driver output 13
13 LCD driver output 12
14 LCD driver output 11
15 LCD driver output 10
16 LCD driver output 9
17 LCD driver output 8
18 LCD driver output 7
19 LCD driver output 6
20 LCD driver output 5
21 LCD driver output 4
22 LCD driver output 3
23 LCD driver output 2
24 LCD driver output 1
25 backplane driver output 2
26 backplane driver output 1
27 data input line (CBUS)
28 data input line enable (CBUS)
Product specification
PCF21xxC family
handbook, halfpage
CLB 1
28 DLEN
VDD 2
OSC 3
27 DATA
26 BP1
VSS 4
S20 5
25 BP2
24 S1
S19 6
23 S2
S18 7
22 S3
PCF2100C
S17 8
21 S4
S16 9
20 S5
S15 10
19 S6
S14 11
18 S7
S13 12
17 S8
S12 13
16 S9
S11 14
15 S10
MLD295
Fig.4 Pin configuration; SOT117-1 and SOT136-1.
1997 Mar 28
6

6 Page









PCF2100 pdf, datenblatt
Philips Semiconductors
LCD drivers
Product specification
PCF21xxC family
8 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDD
VI
VO
IDD, ISS
II
IO
Ptot
PO
Tstg
supply voltage
input voltage DLEN, CLB, DATA and OSC
output voltage BP1, BP2 and S1 to S32
supply current
DC input current
DC output current
total power dissipation per package
power dissipation per output
storage temperature
note 1
Note
1. Derate by 7.7 mW/K when Tamb > 60 °C.
MIN.
MAX.
UNIT
0.5 +8.0 V
VSS 0.5
VSS 0.5
50
VDD + 0.5
VDD + 0.5
+50
V
V
mA
20 +20 mA
25 +25 mA
500 mW
100 mW
65
+150
°C
9 HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices. See “Handling MOS devices”.
ESD in accordance with “MIL STD 883C, Method 3015”.
1997 Mar 28
12

12 Page





SeitenGesamt 24 Seiten
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