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PDF PCD3354AH Data sheet ( Hoja de datos )

Número de pieza PCD3354AH
Descripción 8-bit microcontrollers with DTMF generator and 256 bytes EEPROM
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! PCD3354AH Hoja de datos, Descripción, Manual

INTEGRATED CIRCUITS
DATA SHEET
PCA3354C; PCD3354A
8-bit microcontrollers with DTMF
generator and 256 bytes EEPROM
Product specification
Supersedes data of 1996 May 09
File under Integrated Circuits, IC03
1996 Dec 18

1 page




PCD3354AH pdf
Philips Semiconductors
8-bit microcontrollers with DTMF
generator and 256 bytes EEPROM
5 PINNING INFORMATION
5.1 Pinning
handbook, full pagewidth
P2.1 1
P2.2 2
P2.3 3
DP0.0 4
DP0.1 5
DP0.2 6
DP0.3 7
DP0.4 8
DP0.5 9
DP0.6 10
DP0.7 11
PCA3354CH
PCD3354AH
Product specification
PCA3354C; PCD3354A
33 P1.0
32 P0.7
31 P0.6
30 P0.5
29 P0.4
28 XTAL2
27 XTAL1
26 P0.3
25 P0.2
24 P0.1
23 P0.0
MED266
Fig.2 Pin configuration.
1996 Dec 18
5

5 Page





PCD3354AH arduino
Philips Semiconductors
8-bit microcontrollers with DTMF
generator and 256 bytes EEPROM
Product specification
PCA3354C; PCD3354A
7 EEPROM AND TIMER 2 ORGANIZATION
The PCA3354C; PCD3354A have 256 bytes of Electrically
Erasable Programmable Read Only Memory (EEPROM).
Such non-volatile storage provides data retention without
the need for battery backup. In telecom applications, the
EEPROM is used for storing redial numbers and for short
dialling of frequently used numbers. More generally,
EEPROM may be used for customizing microcontrollers,
such as to include a PIN code or a country code, to define
trimming parameters, to select application features from
the range stored in ROM.
The most significant difference between a RAM and an
EEPROM is that a bit in EEPROM, once written to a
logic 1, cannot be cleared by a subsequent write
operation. Successive write accesses actually perform a
logical OR with the previously stored information.
Therefore, to clear a bit, the whole byte must be erased
and re-written with the particular bit cleared. Thus, an
erase-and-write operation is the EEPROM equivalent of a
RAM write operation.
Whereas read access times to an EEPROM are
comparable to RAM access times, write and erase
accesses are much slower at 5 ms each. To make these
operations more efficient, several provisions are available
in the PCA3354C; PCD3354A.
First, the EEPROM array is structured into 64 four-byte
pages (see Fig.4) permitting access to 4 bytes in parallel
(write page, erase/write page and erase page). It is also
possible to erase and write individual bytes.
Finally, the EEPROM address register provides
auto-incrementing, allowing very efficient read and write
accesses to sequential bytes.
To simplify the erase and write timing, the derivative 8-bit
down-counter (Timer 2) with reload register is provided.
In addition to EEPROM timing, Timer 2 can be used for
general real-time tasks, such as for measuring signal
duration and for defining pulse widths.
1996 Dec 18
11

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