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PDF PTF10135 Data sheet ( Hoja de datos )
| Número de pieza | PTF10135 | |
| Descripción | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTF 10135
5 Watts, 2.0 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10135 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal applications from 1.0 to 2.0
GHz. It is rated at 5 watts minimum output power. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability. 100% lot traceability is standard.
Typical Output Power vs. Input Power
8
7
6
5
4
3 VDD = 26 V
2 IDQ = 70 mA
1 f = 2000 MHz
0
0 0.1 0.2 0.3 0.4 0.5
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
10135A-1234569953
Package 20249
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
39
0.22
–40 to +150
4.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
1 page  
e
Test Circuit
PTF 10135
Block Diagram for f = 1.96 GHz
Q1
PTF 10135
LDMOS RF FET
l1, l2, l7
l3
l4
l5
l6
C1, C3, C8, C9
C2, C5
0.149 l 1.96 GHz
0.081 l 1.96 GHz
0.073 l 1.96 GHz
0.06 l 1.96 GHz
33 pF
0.7 pF
Microstrip 50 W
Microstrip 10.4 W
Microstrip 15.9 W
Microstrip 12.1 W
Microstrip 15.9 W
Chip Cap
Chip Cap
C4
C6
C7, C10
C11
L1, L2
R1, R2
R3
R4
Circuit Board
0.3–3.5 pF Variable Capacitor
0.3 pF
Chip Cap
0.1 mF
Chip Cap
10 mF
SMT Tantalum
4 Turn
#20 AWG, .120” I.D.
220 W
Chip Resistor K1206
2K SMT Potentiometer
10 W
Chip Resistor K1206
e.028" Dielectric Thickness, r = 4.0,
AlliedSignal, G200, 2 oz. copper
Parts Layout (not to scale)
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PTF10135.PDF ] | |
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