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R2000 Schematic ( PDF Datasheet ) - Diodes Incorporated

Teilenummer R2000
Beschreibung HIGH VOLTAGE RECTIFIER
Hersteller Diodes Incorporated
Logo Diodes Incorporated Logo 




Gesamt 14 Seiten
R2000 Datasheet, Funktion
R1LV0408C-I Series
Wide Temperature Range Version
4M SRAM (512-kword × 8-bit)
REJ03C0098-0200Z
Rev. 2.00
May.25.2004
Description
The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II and 32-pin STSOP.
Features
Single 3 V supply: 2.7 V to 3.6 V
Access time: 55/70 ns (max)
Power dissipation:
Active: 6 mW/MHz (typ)
Standby: 1.5 µW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Directly TTL compatible.
All inputs and outputs
Battery backup operation.
Operating temperature: 40 to +85°C
Rev.2.00, May.25.2004, page 1 of 12






R2000 Datasheet, Funktion
R1LV0408C-I Series
DC Characteristics
Parameter
Symbol Min Typ Max Unit Test conditions
Input leakage current
|ILI|
1 µA Vin = VSS to VCC
Output leakage current
Operating current
Average operating current
Standby current
|ILO|
ICC
ICC1
ICC2
ISB
1 µA CS# = VIH or OE# = VIH or
WE# = VIL or VI/O = VSS to VCC
5*1 10 mA CS# = VIL,
Others = VIH/ VIL, II/O = 0 mA
8*1 25 mA Min. cycle, duty = 100%,
CS# = VIL, Others = VIH/VIL
II/O = 0 mA
2*1 5 mA Cycle time = 1 µs,
duty = 100%,
II/O = 0 mA, CS# 0.2 V,
VIH VCC 0.2 V, VIL 0.2 V
0.1*1 0.3 mA CS# = VIH
Standby 5SI
current
to +85°C
to +70°C
to +40°C
to +25°C
ISB1
ISB1
ISB1
ISB1
10 µA Vin 0 V, CS# VCC 0.2 V
8 µA
0.7*2 3 µA
0.5*1 3 µA
7LI to +85°C
ISB1
20 µA
to +70°C
to +40°C
to +25°C
ISB1
ISB1
ISB1
16
0.7*2 10
0.5*1 10
µA
µA
µA
Output low voltage
VOL
0.4 V IOL = 2.1 mA
VOL2
0.2 V IOL = 100 µA
Output high voltage
VOH 2.4
  V IOH = 1.0 mA
VOH2 VCC 0.2   V IOH = 0.1 mA
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed.
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ Max Unit Test conditions
Input capacitance
Cin
 8
pF Vin = 0 V
Input/output capacitance
CI/O   10 pF VI/O = 0 V
Note: 1. This parameter is sampled and not 100% tested.
Note
1
1
Rev.2.00, May.25.2004, page 6 of 12

6 Page









R2000 pdf, datenblatt
R1LV0408C-I Series
Low VCC Data Retention Characteristics
(Ta = 40 to +85°C)
Parameter
Symbol Min Typ Max Unit Test conditions*3
VCC for data retention
VDR 2.0   V CS# VCC 0.2 V, Vin 0 V
Data
retention
current
5SI
to +85°C
to +70°C
to +40°C
to +25°C
ICCDR
ICCDR
ICCDR
ICCDR
  10 µA VCC = 3.0 V, Vin 0 V
 8
0.7*2 3
µA CS# VCC 0.2 V
µA
0.5*1 3 µA
7LI
to +85°C
ICCDR
  20 µA
to +70°C
to +40°C
to +25°C
ICCDR
ICCDR
ICCDR
  16 µA
0.7*2 10 µA
0.5*1 10 µA
Chip deselect to data retention time
Operation recovery time
tCDR
tR
0
tRC*4
ns See retention waveform
ns
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed.
3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode,
Vin levels (address, WE#, OE#, I/O) can be in the high impedance state.
4. tRC = read cycle time.
Low VCC Data Retention Timing Waveform (CS# Controlled)
VCC
2.7 V
tCDR
Data retention mode
tR
2.2 V
VDR
CS#
0V
CS# VCC – 0.2 V
Rev.2.00, May.25.2004, page 12 of 12

12 Page





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