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PBYR3040WT Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBYR3040WT
Beschreibung Rectifier diodes Schottky barrier
Hersteller NXP Semiconductors
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Gesamt 5 Seiten
PBYR3040WT Datasheet, Funktion
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR3045WT series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IO(AV) = 30 A
IFSM = 300 A
VF 0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR3045WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYR30
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
Tmb 107 ˚C
square wave; δ = 0.5; Tmb 124 ˚C
square wave; δ = 0.5; Tmb 124 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
-
-
- 65
MAX.
40WT 45WT
40 45
40 45
40 45
30
30
300
330
2
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX. UNIT
1.6 K/W
1.2 K/W
- K/W
July 1998
1 Rev 1.200





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