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Teilenummer | PBYR2525CT |
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Beschreibung | Rectifier diodes schottky barrier | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 5 Seiten Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR2525CT series
GENERAL DESCRIPTION
Dual nickel silicide schottky barrier
rectifier diodes in a plastic envelope
featuring low forward voltage drop
and absence of stored charge. These
devices can withstand reverse
voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies with
3 V - 3.3 V outputs, or as or-ing
diodes in fault tolerant power supply
systems.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VRRM
VF
IO(AV)
PBYR25-
Repetitive peak reverse
voltage
Forward voltage
Average output current (both
diodes conducting)
MAX.
20CT
20
0.41
30
MAX.
25CT
25
0.41
30
UNIT
V
V
A
PINNING - TO220AB
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode (k)
PIN CONFIGURATION
tab
1 23
SYMBOL
a1 a2
13
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 109 ˚C
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode
I2t for fusing
Repetitive peak reverse current
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Tmb ≤ 135 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 135 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal Tj = 125 ˚C prior
to surge; with reapplied
VRRM(max)
t = 10 ms
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
-
-
-
-
-65
-
MAX.
-20 -25
20 25
20 25
20 25
30
43
30
180
200
162
2
2
175
150
UNIT
V
V
V
A
A
A
A
A
A2s
A
A
˚C
˚C
January 1997
1
Rev 1.000
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PBYR2525CT Schematic.PDF ] |
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