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PDF PBSS5350S Data sheet ( Hoja de datos )
| Número de pieza | PBSS5350S | |
| Descripción | 50 V low VCEsat PNP transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D186
PBSS5350S
50 V low VCEsat PNP transistor
Product specification
2001 Nov 19
1 page  
Philips Semiconductors
50 V low VCEsat PNP transistor
Product specification
PBSS5350S
handb−o1o0k,0h0alfpage
IC
(mA)
− 800
− 600
− 400
− 200
MLD755
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
0
0 −0.4
Tamb = 25 °C.
−0.8 −1.2
− 1.6
−2
VCE (V)
(1) IB = −3.96 nA.
(2) IB = −3.63 nA.
(3) IB = −3.30 nA.
(4) IB = −2.97 nA.
(5) IB = −2.64 nA.
(6) IB = −2.31 nA.
(7) IB = −1.98 nA.
(8) IB = −1.65 nA.
(9) IB = −1.32 nA.
(10) IB = −0.99 nA.
(11) IB = −0.66 nA.
(12) IB = −0.33 nA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
handbook,−h5alfpage
IC
(A)
−4
−3
−2
(1) (2) (3)
MLD756
(4)
(5)
(6)
(7)
(8)
(9)
(10)
−1
0
0 −0.4
Tamb = 25 °C.
−0.8 −1.2
− 1.6
−2
VCE (V)
(1) IB = −250 mA.
(2) IB = −225 mA.
(3) IB = −200 mA.
(4) IB = −175 mA.
(5) IB = −150 mA.
(6) IB = −125 mA.
(7) IB = −100 mA.
(8) IB = −75 mA.
(9) IB = −50 mA.
(10) IB = −25 mA.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
103
handbook, halfpage
RCEsat
(Ω)
102
MLD757
10
1
10 −1
(1)
(2)
(3)
10 −2
−10 −1
−1
IC/IB = 20.
−10
−102
−103
−104
IC (mA)
(1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2001 Nov 19
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PBSS5350S.PDF ] | |
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