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Teilenummer | PBSS5350D |
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Beschreibung | PNP transistor | |
Hersteller | NXP Semiconductors | |
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Gesamt 12 Seiten PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits
Low collector-emitter saturation
voltage VCEsat
High current capability
High efficiency due to less heat
generation
AEC-Q101 qualified
Smaller Printed-Circuit Board (PCB)
area than for conventional transistors
1.3 Applications
Supply line switching circuits
Battery management applications
DC-to-DC conversion
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -50 V
- - -3 A
- - -5 A
- 120 150 mΩ
NXP Semiconductors
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
−1.4
VBEsat
(V)
−1.2
−1.0
−0.8
−0.6
−0.4
mgw170
−103
VCEsat
(mV)
−102
(1)
(2)
−10
(3)
mgw169
(1)
(2)
(3)
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values
−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
mgu390
10
1
(1) (2)
Fig 7.
10−1
−10−1
−1
(3)
−10 −102 −103 −104
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Collector-emitter saturation resistance as a function of collector current; typical values
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
6 of 12
6 Page NXP Semiconductors
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
11.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Contact information. . . . . . . . . . . . . . . . . . . . . . 11
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 June 2011
Document identifier: PBSS5350D
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PBSS5350D Schematic.PDF ] |
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