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PDF PBSS5140T Data sheet ( Hoja de datos )
| Número de pieza | PBSS5140T | |
| Descripción | 40 V low VCEsat PNP transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5140T
40 V low VCEsat PNP transistor
Product specification
Supersedes data of 2001 Jul 20
2004 Jan 07
1 page  
Philips Semiconductors
40 V low VCEsat PNP transistor
Product specification
PBSS5140T
1200
handbook, halfpage
hFE
800
400
(1)
(2)
(3)
MLD452
−010−1
−1
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
−104
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
−10
handbook, halfpage
VBE
(V)
−1
MLD453
(1)
(2)
(3)
−10−1
−10−1
−1
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
−103
−104
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
−102
−10
MLD454
(1)
(3) (2)
102
handbook, halfpage
RCEsat
(Ω)
10
1
MLD677
(1)
(2)
(3)
−1
−1
−10
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−102
−103
−104
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
10−−110−1
−1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10 −10−2 −10−3 −10−4
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2004 Jan 07
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PBSS5140T.PDF ] | |
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