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Teilenummer | PBSS2515VS |
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Beschreibung | 15 V low VCEsat NPN double transistor | |
Hersteller | NXP Semiconductors | |
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Gesamt 12 Seiten DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS2515VS
15 V low VCEsat NPN double
transistor
Product specification
Supersedes data of 2001 Sep 13
2001 Nov 07
Philips Semiconductors
15 V low VCEsat NPN double transistor
Product specification
PBSS2515VS
102
handbook, halfpage
RCEsat
(Ω)
10
1
(1)
(2)
(3)
MLD648
10−110−1
1
10 102 103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 Equivalent on-resistance as a function of
collector current; typical values.
1200
handbook, halfpage
IC
(mA)
800
400
0
02
MLD644
(4) (3) (2) (1)
(5)
(6)
(7)
(8)
(9)
(10)
4 6 8 10
VCE (V)
Tamb = 25 °C.
(1) IB = 4.6 mA.
(2) IB = 4.14 mA.
(3) IB = 3.68 mA.
(4) IB = 3.22 mA.
(5) IB = 2.76 mA.
(6) IB = 2.3 mA.
(7) IB = 1.84 mA.
(8) IB = 1.38 mA.
(9) IB = 0.92 mA.
(10) IB = 0.46 mA.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
2001 Nov 07
6
6 Page Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp12
Date of release: 2001 Nov 07
Document order number: 9397 750 09043
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PBSS2515VS Schematic.PDF ] |
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