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Número de pieza | RD33FG02 | |
Descripción | Rectifier Diode Target Information | |
Fabricantes | Dynex Semiconductor | |
Logotipo | ||
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No Preview Available ! RD33FG
Replaces November 2000, version DS5415-1.1
FEATURES
s Optimised For High Current Rectifiers
s High Surge Capability
s Very Low On-state Voltage
APPLICATIONS
s Electroplating
s Power Supplies
s Welding
RD33FG
Rectifier Diode
Target Information
DS5415-2.0 October 2001
KEY PARAMETERS
VRRM
IF(AV)
IFSM
(max)
(max)
600V
3997A
46750A
VOLTAGE RATINGS
Part and Ordering Repetitive Peak
Number
Reverse Voltage
VRRM
V
Conditions
RD33FG06
RD33FG05
RD33FG04
RD33FG03
RD33FG02
RD33FG01
600
500
V =V
RSM
RRM
400
300
200
100
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
RD33FG03
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: G
(See Package Details for further information)
Fig. 1 Package outline
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1 page RD33FG
80 8
I2t = Î2 x t
2
70 7
60 6
50 5
40 I2t
30
4
3
20 2
10 1
1 10 1 2 3 5 10 20 50
ms Cycles at 50Hz
Duration
Fig. 5 Surge (non-repetitive) forward current vs time
(with 50% VRRM @ Tcase = 175˚C)
0.1
Anode side cooled
Double side cooled
0.01
0.001
0.001
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side Anode side
d.c. 0.032 0.064
Halfwave
0.034 0.066
3 phase 120˚ 0.044 0.076
6 phase 60˚
0.057 0.089
0.01 0.1
Time - (s)
1.0
10
Fig. 6 Maximum (limit) transient thermal impedance
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5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RD33FG02.PDF ] |
Número de pieza | Descripción | Fabricantes |
RD33FG01 | Rectifier Diode Target Information | Dynex Semiconductor |
RD33FG02 | Rectifier Diode Target Information | Dynex Semiconductor |
RD33FG03 | Rectifier Diode Target Information | Dynex Semiconductor |
RD33FG04 | Rectifier Diode Target Information | Dynex Semiconductor |
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