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PDF RC5061 Data sheet ( Hoja de datos )

Número de pieza RC5061
Descripción High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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www.fairchildsemi.com
RC5061
High Performance Programmable Synchronous
DC-DC Controller for Multi-Voltage Platforms
Features
• Programmable output for Vcore from 1.3V to 3.5V using
an integrated 5-bit DAC
• Controls adjustable linears for Vtt (1.5V), and Vclock
(2.5V)
• Meets VRM specification with as few as 5 capacitors
• Meets 1.550V +40/-70mV over initial tolerance,
temperature and transients
• Remote sense
• Active Droop (Voltage Positioning)
• Drives N-Channel MOSFETs
• Overcurrent protection using MOSFET sensing
• 85% efficiency typical at full load
• Integrated Power Good and Enable/Soft Start functions
• 20 pin SOIC package
Block Diagram
Applications
• Power supply for Pentium® III Camino Platform
• Power supply for Pentium III Whitney Platform
• VRM for Pentium III processor
• Programmable multi-output power supply
Description
The RC5061 is a synchronous mode DC-DC controller IC
which provides a highly accurate, programmable set of output
voltages for multi-voltage platforms such as the Intel Camino,
and provides a complete solution for the Intel Whitney and other
high-performance processors. The RC5061 features remote
voltage sensing, independently adjustable current limit, and
Active Droop for optimal converter transient response. The
RC5061 uses a 5-bit D/A converter to program the output
voltage from 1.3V to 3.5V. The RC5061 uses a high level of
integration to deliver load currents in excess of 16A from a 5V
+3.3V
9
10
+1.5V
11
+
-
VCCP
+
-
12
+2.5V
OSC
REF
PWRGD,
OCL
REF
PWRGD,
OCL
+5V
VCCA 17
OCL
-
+
-
+
+12V
15
RS
16
20 VCCP
1 HIDRV
+5V
--
+
+
5-Bit
DAC
8 765 4
VID0VID2 VID4
VID1 VID3
1.24V
Reference
3
GNDA
Digital
Control
13
ENABLE/SS
Power
Good
2
19 LODRV
18
GNDP
14
PWRGD
VCC
Pentium is a registered trademark of Intel Corporation.
REV. 1.0.0 7/6/00

1 page




RC5061 pdf
PRODUCT SPECIFICATION
Table 1. Output Voltage Programming Codes
VID4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
VID3
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
VID2
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
Note:
1. 0 = processor pin is tied to GND.
1 = processor pin is open.
VID1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
VID0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
RC5061
Nominal VOUT
1.30V
1.35V
1.40V
1.45V
1.50V
1.55V
1.60V
1.65V
1.70V
1.75V
1.80V
1.85V
1.90V
1.95V
2.00V
2.05V
2.0V
2.1V
2.2V
2.3V
2.4V
2.5V
2.6V
2.7V
2.8V
2.9V
3.0V
3.1V
3.2V
3.3V
3.4V
3.5V
REV. 1.0.0 7/6/00
5

5 Page





RC5061 arduino
PRODUCT SPECIFICATION
RC5061
Table 3. RC5061 Application Bill of Materials for Intel Coppermine/Camino Motherboards
(Typical Design)
Reference Manufacturer Part # Quantity
Description
Requirements/Comments
C1 AVX
TAJB475M010R5
1 4.7µF, 10V Capacitor
C2, C5
Panasonic
ECU-V1C105ZFX
2 1µF, 16V Capacitor
C3-4,C6
Panasonic
ECU-V1H104ZFX
3 100nF, 50V Capacitor
C8-9
Sanyo
6MV1000FA
2 1000µF, 6.3V Electrolytic
C10-11
Any
2 22µF, 6.3V Capacitor Low ESR
CIN Sanyo
10MV1200GX
3 1200µF, 10V Electrolytic IRMS = 2A
COUT
Sanyo
6MV1500GX
12 1500µF, 6.3V Electrolytic ESR 44m
D1 Motorola
MBRD835L
1 8A Schottky Diode
L1 Any
Optional 2.5µH, 5A Inductor
DCR ~ 10m
See Note 1.
L2 Any
1 1.3µH, 15A Inductor
DCR ~ 3m
Q1
Q2
Q3-4
Fairchild
FDB6030L
Fairchild
FDB7030BL
Fairchild
FDB4030L
1 N-Channel MOSFET RDS(ON) = 20m@
VGS = 4.5V See Note 2.
1 N-Channel MOSFET RDS(ON) = 10m@
VGS = 4.5V See Note 2.
2 N-Channel MOSFET
R1 Any
1 33
R2-3
Any
2 4.7
R4 Any
1 10K
R6 Any
1 10
R7 Any
1 6.24K
R8 N/A
1 30m
PCB Trace Resistor
U1 Fairchild
RC5061M
1 DC/DC Controller
Notes:
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply
with Intel dI/dt requirements. L1 may be omitted if desired.
2. For 12.5A designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For
designs using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET
selections, refer to Applications Bulletins AB-8 and AB-15.
REV. 1.0.0 7/6/00
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