Datenblatt-pdf.com


RBV1000 Schematic ( PDF Datasheet ) - EIC discrete Semiconductors

Teilenummer RBV1000
Beschreibung SILICON BRIDGE RECTIFIERS
Hersteller EIC discrete Semiconductors
Logo EIC discrete Semiconductors Logo 




Gesamt 2 Seiten
RBV1000 Datasheet, Funktion
RBV1000 - RBV1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
RBV25
C3 30 ± 0.3
3.9 ± 0.2
4.9 ± 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V DC
* Ideal for printed circuit board
* Very good heat dissipation
3.2 ± 0.1
+ ~~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 5.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
I F(AV)
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
T STG
RBV
1000
50
35
50
RBV
1001
100
70
100
RBV
1002
200
140
200
RBV
1004
400
280
400
10
RBV
1006
600
420
600
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
RBV
1008
800
560
800
RBV
1010
UNIT
1000 Volts
700 Volts
1000 Volts
Amps.
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998





SeitenGesamt 2 Seiten
PDF Download[ RBV1000 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RBV1000SILICON BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors
RBV1000DSILICON BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors
RBV1001SILICON BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors
RBV1001DSILICON BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors
RBV1002SILICON BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche