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Teilenummer | RB751 |
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Beschreibung | Schottky barrier diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 2 Seiten Diodes
Schottky barrier diode
RB751S-40 / RB751V-40
RB751S-40 / RB751V-40
!Applications
High speed switching
For Detection
!External dimensions (Units : mm)
RB751S-40
CATHODE MARK
!Features
1) Small surface mounting type.
(EMD2, UMD2)
2) Low reverse current and low
forward voltage.
3) High reliability.
!Construction
Silicon epitaxial planar
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
RB751V-40
5
0.3±0.05
0.12±0.05
0.8±0.05
0.6±0.1
CATHODE MARK
CATHODE MARK
55
0.3±0.05
1.25±0.1
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
0.1
+0.1
−0.05
0.7
+0.2
−0.1
0.3±0.05
1.25±0.1
0.1
+0.1
−0.05
0.7
+0.2
−0.1
∗ There are two different markings.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current *
Junction temperature
Storage temperature
* 60 Hz for 1
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
30
30
200
125
−40~+125
Unit
V
V
mA
mA
˚C
˚C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
CT
Note) ESD sensitive product handling required.
Min.
−
−
−
Typ.
−
−
2.0
Max.
0.37
0.5
−
Unit Conditions
V IF = 1mA
µA VR = 30V
pF VR = 1V, f = 1MHz
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ RB751 Schematic.PDF ] |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |