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Teilenummer | RB521S-30 |
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Beschreibung | Schottky barrier diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 3 Seiten Diodes
Schottky barrier diode
RB521S-30
RB521S-30
zApplications
Low current rectification and high speed switching
zFeatures
1) Extremely small surface mounting type. (EMD2)
2) IO=200mA guaranteed despite the size.
3) Low VF.( VF=0.40V Typ. At 200mA )
zConstruction
Silicon epitaxial planar
zExternal dimensions (Units : mm)
CATHODE MARK
C
0.3±0.05
0.12±0.05
0.8±0.05
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
0.6±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
DC reverse voltage VR 30
Mean rectifying current
IO
Peak forward surge current∗ IFSM
200
1
Junction temperature
Tj
125
Storage temperature
Tstg −40~+125
∗ 60Hz for 1
Unit
V
mA
A
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Note) sensitive product handling required.
Min.
−
−
Typ.
−
−
Max.
0.50
30
Unit Conditions
V IF = 200mA
µA VR = 10V
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ RB521S-30 Schematic.PDF ] |
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