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Teilenummer | RB481 |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 2 Seiten Diodes
Schottky Barrier Diode
RB481K
RB481K
!Applications
Low current rectification
!Features
1) Compact size.
2) High reliability.
3) Extremely low forward voltage.
4) This is a composite component and is ideal for
reducing the number of components used.
!Construction
Silicon epitaxial planar
!External dimensions (Units: mm)
1.25±0.1
0.6 0.65
0.3±0.1 0.2±0.1
(1) (4)
0.9±0.1
0.7
(2) (3)
0.2±0.1 0.2±0.1
0.65 0.65
1.25±0.1
2.0±0.2
0~0.1
0.15±0.05
(1) (4)
ROHM : UMD4
EIAJ : SC - 82
(2) (3)
!Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current∗
Junction temperature
Storage temperature
∗ 60 Hz for 1
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
30
30
0.2
1
125
−40~+125
Unit
V
V
A
A
°C
°C
!Electrical characteristics (Ta=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
VF3
VF4
IR
Min.
−
−
−
−
−
Typ.
0.18
0.25
0.34
0.40
3.6
Max.
0.28
0.33
0.43
0.50
30
Unit Conditions
V IF=1mA
V IF=10mA
V IF=100mA
V IF=200mA
µA VR=10V
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ RB481 Schematic.PDF ] |
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