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Teilenummer | RB425D |
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Beschreibung | Schottky barrier diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 4 Seiten Data Sheet
Schottky Barrier Diode
RB425D
Applications
Low power rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planer
2.9±0.2
0.4 +-00..105 E各aリc同hー寸leド法aとd もhas same dimension
(3)
+0.1
0 .15 -0.06
0.95
(2)
0.95
0.95
1.9±0.2
(1)
0~ 0.1
0 .8±0 .1
1. 1±0. 2
0. 01
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications (Unit : mm)
4.0±0 .1
2.0±0.05
φ1 .5± 0.1
0
0.8MIN.
SMD3
Structure
0.3±0.1
3 .2±0 .1
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode:Io/2
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
4.0±0.1
φ1.05MIN
Limits
40
40
100
1
125
40 to 125
Unit
V
V
mA
A
°C
°C
1.35±0.1
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF1 - - 0.55
VF2 - - 0.34
IR1 - - 30
Ct1 - 6 -
Unit Conditions
V IF=100mA
V IF=10mA
μA VR=10V
pF VR=10V , f=1MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB425D Schematic.PDF ] |
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