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RB160M-60 Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RB160M-60
Beschreibung Shottky barrier diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 4 Seiten
RB160M-60 Datasheet, Funktion
Data Sheet
Schottky Barrier Diode
RB160M-60
Applications
General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
    0.05
Land size figure (Unit : mm)
1.2
Features
1)Small power mold type.PMDU
2)Low IR
3)High reliability
Construction
Silicon epitaxial planar
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
PMDU
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak 60Hz1cyc
Junction temperature
VRM
VR
Io
IFSM
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. 180°Half sine wave
Limits
60
60
1
30
150
40 to 150
Unit
V
V
A
A
C
C
1.5MAX
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF - 0.49 0.55
IR - 7.0 50
Ct - 40 -
Unit Conditions
V IF=1.0A
μA VR=60V
pF VR=10V , f=1MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.E





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