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RA30H1317M Schematic ( PDF Datasheet ) - Mitsubishi Electric Semiconductor

Teilenummer RA30H1317M
Beschreibung RF MOSFET MODULE
Hersteller Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor Logo 




Gesamt 8 Seiten
RA30H1317M Datasheet, Funktion
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA30H1317M
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H1317M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4V (typical) and 5V (maximum). At VGG=5V,
the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA30H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H1317M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H1317M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006






RA30H1317M Datasheet, Funktion
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M
TEST BLOCK DIAGRAM
Power
Meter
DUT
5
12
34
Spectrum
Analyzer
Signal
Pre- Directional
Generator Attenuator amplifier Attenuator
Coupler
ZG=50
C1
C2
ZL=50
Directional
Power
Coupler
Attenuator Meter
C1, C2: 4700pF, 22uF in parallel
-+
DC Power
Supply VGG
+-
DC Power
Supply VDD
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
RA30H1317M
MITSUBISHI ELECTRIC
6/8
4
5
24Jan 2006

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