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R4332 Schematic ( PDF Datasheet ) - Hamamatsu Corporation

Teilenummer R4332
Beschreibung PHOTOMULTlPLlER TUBES
Hersteller Hamamatsu Corporation
Logo Hamamatsu Corporation Logo 




Gesamt 4 Seiten
R4332 Datasheet, Funktion
PHOTOMULTlPLlER TUBES
R3788, R4332
High Sensitivity, Bialkali Photocathode
28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
Spectral Response
R3788 .................................................... 185 to 750 nm
R4332 ..................................................... 160 to 750 nm
High Cathode Sensitivity
Luminous ........................................... 120 A/lm Typ.
Radiant at 420nm .................................. 90mA/W Typ.
Quantum Efficiency at 210nm ......... 40% Typ. (R4332)
High Anode Sensitivity (at 1000V)
Luminous ............................................... 1200A/lm Typ.
Radiant at 420nm ............................ 9.0 105 A/W Typ.
APPLICATIONS
Fluorescence Spectrophotometers
Emission Spectrophotometers
Atomic Absorption Spectrophotometers
GENERAL
Parameter
Spectral Response
R3788
R4332
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
R3788
R4332
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
Weight
SuitabIe Socket
SuitabIe Socket Assembly
Description Unit
185 to 750
160 to 750
420
Bialkali
8 24
nm
nm
nm
mm
UV glass
Fused silica
Bialkali
Circular-cage
9
4
6
11-pin base
JEDEC No. B11-88
45
E678–11A (option)
E717–21(option)
pF
pF
g
Figure 1: Typical Spectral Response
TPMSB0081EA
100
R4332
CATHODE RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
10
R3788
1
0.1
0.01
100 200 300 400 500 600 700 800
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K.





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