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R316-02 Schematic ( PDF Datasheet ) - Hamamatsu Corporation

Teilenummer R316-02
Beschreibung PHOTOMULTIPLIER TUBES
Hersteller Hamamatsu Corporation
Logo Hamamatsu Corporation Logo 




Gesamt 2 Seiten
R316-02 Datasheet, Funktion
PHOTOMULTIPLIER TUBES
R316, R316-02
Spectral Response for Red to Near Infrared Detection
28mm (1-1/8 Inch) Diameter, Ag-O-Cs Photocathode, 11-stage, Head-On Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Material
Minimum Effective Area
Dynode
Direct Interelectrode
Capacitances
Base
Suitable Socket
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
Description/Value
400 to 1200
800
Ag-O-Cs
25
Borosilicate glass
Box-and-grid
11
3.0
3.5
14-pin glass base
E678-14C (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Ambient Temperature
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
1500
250
0.01
-80 to +50
CHARACTERISTICS (at 25°C)
Parameter
Luminous (2856K)
Radiant at 800nm (peak)
Cathode Sensitivity
Red/White Ratio
(IR-D80A filter)
R316
R316-02
Quantum Efficiency R316
at 1.06µm
R316-02
Anode Sensitivity
Luminous (2856K)
Radiant at 800nm (peak)
Gain
Anode Dark Current at 4A/lm
R316
(after 30min. storage in darkness)
R316-02
Time Response
Anode Pulse Rise Time
Electron Transit Time
Min.
10
0.04
5
Typ.
20
1.9
0.1
0.14
0.02
0.06
10
950
5.0 × 105
1000
2000
10
50
Max.
3000
5000
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11
Ratio
111111111111
Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode
P
Unit
nm
nm
mm dia.
pF
pF
Unit
Vdc
Vdc
mA
°C
Unit
µA/lm
mA/W
%
%
A/lm
A/W
nA
nA
ns
ns
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K.





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