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PDF RF2174PCBA Data sheet ( Hoja de datos )
| Número de pieza | RF2174PCBA | |
| Descripción | 3V DCS POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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RF2174
0 3V DCS POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V DCS1800 (PCN) Cellular Handsets
• Commercial and Consumer Systems
• 3V DCS1900 (PCS) Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• Portable Battery-Powered Equipment
• GPRS Compatible
Product Description
The RF2174 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in DCS1800/1900 hand-held digital
cellular equipment and other applications in the
1700MHz to 2000MHz band. On-board power control
provides over 65dB of control range with an analog volt-
age input, and provides power down with a logic “low” for
standby operation. The device is self-contained with 50Ω
input and the output can be easily matched to obtain opti-
mum power and efficiency characteristics. The RF2174
can be used together with the RF2173 for dual-band
operation. The device is packaged in an ultra-small plas-
tic package, minimizing the required board space.
3.75
0.10 C A
2 PLCS
12°
MAX
3.75
0.10 C B
2 PLCS
-B-
0.80
TYP
1.50
SQ.
0.75
0.50
INDEX AREA
Dimensions in mm.
0.45
0.28
Shaded pin is lead 1.
4.00
0.10 C B
2 PLCS
2.00
A
2 1.60
2 PLCS
4.00
3.20
2 PLCS
2.00
0.10 C A
2 PLCS
0.10 M C A B
0.05
0.00
1.00
0.90
0.75
0.65
C
0.05
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1 16 15 14 13
AT_EN 2
12 RF OUT
RF IN 3
11 RF OUT
GND1 4
10 RF OUT
56789
Package Style: QFN, 16-Pin, 4x4
Features
• Single 2.7V to 4.8V Supply Voltage
• +33dBm Output Power at 3.5V
• 27dB Gain with Analog Gain Control
• 51% Efficiency
• 1700MHz to 1950MHz Operation
• Supports DCS1800 and PCS1900
Ordering Information
RF2174
3V DCS Power Amplifier
RF2174PCBA-41X Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A8 060918
2-275
1 page  
RF2174
Pin
15
16
Pkg
Base
Function
VCC2
VCC2
GND
Description
Interface Schematic
Power supply for the driver stage and interstage matching. This pin
forms the shunt inductance needed for proper tuning of the interstage
match. Please refer to the application schematic for proper configura-
tion, and note that position and value of the components are important.
VCC2
Same as pin 15.
From Bias
Stages GND2
Same as pin 15.
Ground connection for the output stage. This pad should be connected
to the groundplane by vias directly under the device. A short path is
required to obtain optimum performance, as well as to provide a good
thermal path to the PCB for maximum heat dissipation.
Rev A8 060918
2-279
5 Page 
RF2174
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.032”; Board Material FR-4; Multi-Layer
Rev A8 060918
2-285
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet RF2174PCBA.PDF ] | |
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