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RF1S9640SM Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer RF1S9640SM
Beschreibung 11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs
Hersteller Intersil Corporation
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Gesamt 7 Seiten
RF1S9640SM Datasheet, Funktion
Data Sheet
IRF9640, RF1S9640SM
July 1999 File Number 2284.2
11A, 200V, 0.500 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon-gate
power field-effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and as drivers for
other high-power switching devices. The high input
impedance allows these types to be operated directly from
integrated circuits.
Formerly developmental type TA17522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9640
TO-220AB
IRF9640
RF1S9640SM
TO-263AB
RF1S9640
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 11A, 200V
• rDS(ON) = 0.500
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-33
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999






RF1S9640SM Datasheet, Funktion
Test Circuits and Waveforms
IRF9640, RF1S9640SM
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
VDS
L
DUT
-
VDD
+
IAS
0.01
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
RL
VGS
DUT
RG
-
VDD
+
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
-VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50k
0.3µF
DUT
D
G DUT
0
Ig(REF)
S
+VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-38
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
0
VDS
Qgs
VDD
0
Qgd
Qg(TOT)
VGS
Ig(REF)
FIGURE 20. GATE CHARGE WAVEFORMS

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