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PDF RF1S9630SM Data sheet ( Hoja de datos )
| Número de pieza | RF1S9630SM | |
| Descripción | 6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF9630, RF1S9630SM
July 1999 File Number 2224.3
6.5A, 200V, 0.800 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for other
high-power switching devices. The high input impedance
allows these types to be operated directly from integrated
circuits.
Formerly developmental type TA17512.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9630
TO-220AB
IRF9630
RF1S9630SM
TO-263AB
RF1S9630
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.
Features
• 6.5A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-27
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9630, RF1S9630SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
7.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
5.6
4.2
2.8
TJ = -55oC
TJ = 25oC
TJ = 125oC
1.4
0
0 -3 -6 -9 -12 -15
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
2000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
1600
CRSS = CGD
COSS ≈ CDS + CGD
1200
800
CISS
COSS
400
CRSS
00
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
-10
-1.0 TJ = 25oC
-0.1
-0.4
-0.6 -0.8
-1.0 -1.2 -1.4
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -8A
-5
- 10
- 15
0
VDS = -160V
VDS = -100V
VDS = -40V
8 16 24 42
Qg(TOT), TOTAL GATE CHARGE (nC)
40
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-31
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RF1S9630SM.PDF ] | |
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