PDF RF1S70N06SM Data sheet ( Hoja de datos )

Número de pieza	RF1S70N06SM
Descripción	70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs
Fabricantes	Fairchild Semiconductor
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No Preview Available ! SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in appli- cations such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG70N06 TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06 TO-262AA F1S70N06 RF1S70N06SM TO-263AB F1S70N06 NOTE: When ordering use the entire part number. Add the sufﬁx, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Formerly developmental type TA49007. DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE Symbol D G S JEDEC TO-263AB GATE SOURCE MA DRAIN (FLANGE) Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM 60 60 ±20 70 Refer to Peak Current Curve Refer to UIS Curve 150 1.0 -55 to +175 UNITS V V V A W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright © Harris Corporation 1995 3-51 File Number 3206.3 1 page RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves (Continued) 300 If R = 0 tAV = (L)(IAS)/(1.3RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R) ln [(IASR)/(1.3*RATED BVDSS-VDD) +1] 100 STARTING TJ = +25oC STARTING TJ = +150oC 10 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322 Test Circuits and Waveforms VDS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS tP 0V RG L DUT + VDD - IL 0.01Ω tP IAS BVDSS VDS VDD tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT VGS 0V RGS VDD RL VDS DUT FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDS tON tD(ON) tR 90% 10% VGS 10% 50% PULSE WIDTH tOFF tD(OFF) tF 90% 10% 90% 50% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 3-55 5 Page

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